CHP4511 rohs compliant ref. : dsCHP45110197 - 16 jul 10 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 6-18ghz phase-shifter gaas monolithic microwave ic description the CHP4511 is a 4-bit digital phase- shifter with an output single pole double through (spdt) switch. it is designed for 6 to 18ghz frequency range applications. the backside of the chip is both rf and dc grounded. the circuit is manufactured with a power phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features broadband performances : 6-18ghz 22.5 phase step losses < 15db 22dbm input power at -1dbc i/o reversible. adaptative spdt 0/-5v control voltage chip size: 4.62 x 3.0 x 0.1mm i/o o/i 1 o/i 2 180 90 45 22.5 _a _c _ d e a _b _ e typical on wafer measurements db(s21) for 16 states db(s11)and db(s22) for 16 main characteristics tamb. = 25c symbol parameter min typ max unit fop operating frequency range 6 18 ghz g small signal gain -15 -7 db poi1 output power at 1db compression 10 dbm vctrl voltage control -5 0 v esd protection: electrostatic discharge sensitive d evice. observe handling precautions !
CHP4511 6-18ghz phase-shifter ref. : dsCHP45110197 - 16 jul 10 2/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 electrical characteristics low level control voltage = -5v, high level control voltage = 0v pin = 5dbm on the input, output on spdt 1 or 2 t amb = +25c parameter conditions min typ. max unit fop operating frequency range 6 18 ghz phrange phase shifter range 0 to 360 deg. phstep phase step 22.5 deg s11 input reflection coefficient -6 db s22 output reflection coefficient -7 db s22off output reflection coefficient path off -15 db il insertion loss 6 to 14ghz 15 to 18ghz 13 15 db iso isolation between output 1 and 2 25 35 db av amplitude variation -1.5 / +2.5 db pio1db output power @1db compression in => out1 or 2 10 dbm poi1db output power @1db compression out1 or 2 => in 12 dbm parameter conditions average std dev pk to pk unit ppe peak phase error state 22.5 state 45 state 90 state 180 22.5 5 45 5 90 5 180 10 < 3 < 6 < 6 < 6 6 / average 10 / average 10 / average 10 / average deg peak phase error (ppe) definition: ppe (i) =measured_phase(s21) (i) C measured_phase(s21) (0) C theoretical_phase (i) (20 = state ? [0,15] amplitude variation (av) definition: av (i) = measured_db(s21) (i) C measured_db(s21) (0) (i) = state ? [0,15] absolute maximum ratings tamb = +25c operation of this device above anyone of these para maters may cause permanent damage. symbol parameter values unit vgi phase shifter control voltage -7 to +0.6 v pin maximum peak input power overdrive (1) +30 dbm top operating temperature range -40 to +70 c tstg storage temperature range -55 to +125 c (2) duration < 1s.
6-18ghz phase-shifter CHP4511 ref. : dsCHP45110197 - 16 jul 10 3/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 phase shifter control interface the 4-bit phase shifter is controlled by 5 voltages : state total phase shift _ d 25 _ c 45 _ b 90 a 180 _ a 180 0 0 0 0 0 -5v 0 1 22.5 -5v 0 0 -5v 0 2 45 0 -5v 0 -5v 0 3 67.5 -5v -5v 0 -5v 0 4 90 0 0 -5v -5v 0 5 112.5 -5v 0 -5v -5v 0 6 135 0 -5v -5v -5v 0 7 157.5 -5v -5v -5v -5v 0 8 180 0 0 0 0 -5v 9 202.5 -5v 0 0 0 -5v 10 225 0 -5v 0 0 -5v 11 247.5 -5v -5v 0 0 -5v 12 270 0 0 -5v 0 -5v 13 292.5 -5v 0 -5v 0 -5v 14 315 0 -5v -5v 0 -5v 15 337.5 -5v -5v -5v 0 -5v the spdt switch allows to choice one of the output path: spdt control output selected e _ e 0 -5v o/i 1 -5v 0 o/i 2
CHP4511 6-18ghz phase-shifter ref. : dsCHP45110197 - 16 jul 10 4/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical on wafer [s] measurements at +25c peak phase error versus frequency for all states peak phase error versus states 6ghz< frequency < 18ghz amplitude variation versus frequency for all states amplitude variation versus states 6ghz< frequency < 18ghz db(s21) versus frequency for all states db(s21) versus states 6ghz< frequency < 18ghz
6-18ghz phase-shifter CHP4511 ref. : dsCHP45110197 - 16 jul 10 5/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 db(s11) versus frequency for all states db(s11) versus states 6ghz< frequency < 18ghz db(s22) versus frequency for all states db(s22) versus states 6ghz< frequency < 18ghz db(s21) for path off: in => out1, state 0 gain and output power at 12ghz (input to output1) (20 samples)
CHP4511 6-18ghz phase-shifter ref. : dsCHP45110197 - 16 jul 10 6/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 chip assembly and mechanical data in/out out/in 1 out/in 2 a b e a c d e in/out out/in 1 out/in 2 a b b e e a a c c d d e note: 25m diameter gold wire is recommended bonding pad positions. (chip thickness: 100m.all dimensions are in microm eters)
6-18ghz phase-shifter CHP4511 ref. : dsCHP45110197 - 16 jul 10 7/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 notes
CHP4511 6-18ghz phase-shifter ref. : dsCHP45110197 - 16 jul 10 8/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 ordering information chip form : CHP4511-99f elettronica s.p.a has the intellectual property of this mmic and giv es to united monolithic semiconductors s.a.s. non-exclusive license to sell it. information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
|
